20V Dual N-Channel Enhancement Mode MOSFET

Description
The NP8205 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
VDS=20V,ID =4A
RDS(ON) =18mΩ (typical) @ VGS=4.5V
RDS(ON)=21.5mΩ (typical) @ VGS=2.5V
High power and current handing capability
Lead free product is acquired
Surface mount package
Application
Battery protection
Load switch
Power management
Package
SOT23-6L