Description
The NP3401MR uses advanced trench technology
to provide excellent R DS(ON) , low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications.
General Features
V DS =-30V , I D =-4.2A
R DS(ON) (Typ.)=48mΩ @V GS =-4.5V
R DS(ON) (Typ.)=60mΩ @V GS =-2.5V
High power and current handing capability
Lead free product is acquired
Surface mount package
Application
PWM applications
Load switch
Package
SOT-23-3L

NP3401MR 30V P-Channel Enhancement Mode MOSFET
BTSS20132024-09-11 20:42
相关推荐
ASIM阿赛姆17 天前
高频应用中MOS管开关损耗过大如何降低?四维度工程优化策略ASIM阿赛姆18 天前
贴片MOS管散热不良导致温升过高如何改善MOS管-冠华伟业22 天前
场效应管n沟道和p沟道的区别MOS管-冠华伟业23 天前
场效应管通电短路小菜鸟派大星1 个月前
电路学习(九)MOS管MOS管-冠华伟业3 个月前
微硕WSD4078DN56双N沟MOSFET,汽车48V桌板PD快充同步Buck核“芯”沉在嵌入式的鱼3 个月前
STM32--大功率mos管驱动模块wmq1636 个月前
MOSFET驱动电路设计时,为什么“慢”开,“快”关?憧憬一下7 个月前
MOS管和比较器VirtuousLiu1 年前
MOS管损坏原因